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Electric Conduction Mechanisms Study within Zr Doped Mn3O4 Hausmannite Thin Films through an Oxidation Process in Air
Applied Microscopy 2017;47:131-47
Published online September 30, 2017
© 2017 Korean Society of Microscopy.

L. Ben Said1,2,*, R. Boughalmi1, A. Inoubli3, M. Amlouk1,2

1Unit of Physics of Semiconductor Devices, Faculty of Science of Tunis, Tunis El Manar University, Tunis 2092, Tunisia
2Faculty of Science of Bizerte, Carthage University, Zarzouna 7021, Tunisia
3Laboratory of Physics of Lamellar and Nanomaterial Materials, Hybrids (LPMLNMH), Faculty of Science of Bizerte, Carthage University, Zarzouna 7021, Tunisia
Correspondence to:
Said LB,
Tel: +216-58-147-883
Received September 8, 2017; Revised September 12, 2017; Accepted September 12, 2017.
This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License ( which permits unrestricted noncommercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
In this work further optical and electrical investigations of pure and Zr doped Mn3O4 (from 0 up to 20 at.%) thin films as a function of frequency. First, the refractive index, the extinction coefficient and the dielectric constants in terms of Zr content are reached from transmittance and reflectance data. The dispersion of the refractive index is discussed by means of Cauchy model and Wemple and DiDomenico single oscillator models. By exploiting these results, it was possible to estimate the plasma pulse ωp, the relaxation time τ and the dielectric constant ε. Second, we have performed original ac and dc conductivity studies inspired from Jonscher model and Arrhenius law. These studies helped establishing significant correlation between temperature, activation energy and Zr content. From the spectroscopy impedance analysis, we investigated the frequency relaxation phenomenon and hopping mechanisms of such thin films. Moreover, a special emphasis has been putted on the effect of the oxidation in air of hausmannite thin films to form Mn2O3 ones at 350°C. This intrigue phenomenon which occurred at such temperature is discussed along with this electrical study. Finally, all results have been discussed in terms of the thermal activation energies which were determined with two methods for both undoped and Zr doped Mn3O4 thin films in two temperature ranges.
Keywords : Mn3O4, Zr doping, Thin films, Impedance spectroscopy, Oxidation

September 2017, 47 (3)