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Transmission Electron Microscopy Specimen Preparation for Two Dimensional Material Using Electron Beam Induced Deposition of a Protective Layer in the Focused Ion Beam Method
Applied Microscopy 2018;48:122-5
Published online December 28, 2018
© 2018 Korean Society of Microscopy.

Byeong-Seon An, Yeon Ju Shin1, Jae-Seon Ju1, and Cheol-Woong Yang*

School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 16419, Korea, 1Cooperative Center for Research Facilities, Sungkyunkwan University, Suwon 16419, Korea
Correspondence to: Yang CW, http://orcid.org/0000-0003-0475-8399, Tel: +82-31-290-7362, Fax: +82-31-290-7371, E-mail: cwyang@skku.edu
Received December 3, 2018; Revised December 21, 2018; Accepted December 21, 2018.
This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/4.0) which permits unrestricted noncommercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract

The focused ion beam (FIB) method is widely used to prepare specimens for observation by transmission electron microscopy (TEM), which offers a wide variety of imaging and analytical techniques. TEM has played a significant role in material investigation. However, the FIB method induces amorphization due to bombardment with the high-energy gallium (Ga+) ion beam. To solve this problem, electron beam induced deposition (EBID) is used to form a protective layer to prevent damage to the specimen surface. In this study, we introduce an optimized TEM specimen preparation procedure by comparing the EBID of carbon and tungsten as protective layers in FIB. The selection of appropriate EBID conditions for preparing specimens for TEM analysis is described in detail.

Keywords : 2-D materials, Focused ion beam (FIB), Electron beam induced deposition (EBID)
Figures
Fig. 1. Schematics for preparation of TEM specimen fabricated using (A) carbon-EBID and (B) tungsten-EBID as protective layer in FIB method.
Fig. 2. (A) Representative Raman spectra of MoS2 (B) the plan-view HR-TEM micrograph of MoS2 (C) FFT corresponding to plan-view HR TEM micrograph.
Fig. 3. The cross-sectional HR TEM image and line profile of MoS2-graphene heterostructure in TEM specimen fabricated using (A) carbon-EBID and (B) tungsten-EBID as protective layer.
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